2SK1859-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 900V 6A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Технічний опис 2SK1859-E Renesas Electronics Corporation
Description: MOSFET N-CH 900V 6A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3P, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції 2SK1859-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SK1859-E | Виробник : Renesas Electronics |
MOSFET MOSFET - Pb Free |
товару немає в наявності |