2SK2315TYTR-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 2A UPAK
Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 4V
Part Status: Last Time Buy
Supplier Device Package: UPAK
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис 2SK2315TYTR-E Renesas Electronics Corporation
Description: MOSFET N-CH 60V 2A UPAK, Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3V, 4V, Part Status: Last Time Buy, Supplier Device Package: UPAK, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 1A, 4V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції 2SK2315TYTR-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SK2315TYTR-E | Виробник : Renesas Electronics |
MOSFET MOSFET - Pb Free |
товару немає в наявності |