Технічний опис 2SK2916(F) TOS
Description: MOSFET N-CH 500V 14A TO3PIS, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N)IS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.
Інші пропозиції 2SK2916(F)
| Фото | Назва | Виробник | Інформація |
Доступність |
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2SK2916(F) | Виробник : Toshiba |
 Trans MOSFET N-CH Si 500V 14A 3-Pin(3+Tab) TO-3P(N)IS |
товар відсутній |
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2SK2916(F) | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 14A TO3PIS Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N)IS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
товар відсутній |