2SK3430-Z-E1-AZ Renesas Electronics Corporation

Description: MOSFET N-CH 40V 80A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Power Dissipation (Max): 1.5W (Ta), 84W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tape & Reel (TR).