2SK3479-Z-E1-AZ

Description: MOSFET N-CH 100V 83A TO-263, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Last Time Buy, Supplier Device Package: TO-263, TO-220SMD, Power Dissipation (Max): 1.5W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).