Технічний опис 2SK3479-Z-E1-AZ
Description: MOSFET N-CH 100V 83A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V, Power Dissipation (Max): 1.5W (Ta), 125W (Tc), Supplier Device Package: TO-263, TO-220SMD, Part Status: Last Time Buy, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V.
Інші пропозиції 2SK3479-Z-E1-AZ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
2SK3479-Z-E1-AZ | Виробник : Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V Power Dissipation (Max): 1.5W (Ta), 125W (Tc) Supplier Device Package: TO-263, TO-220SMD Part Status: Last Time Buy Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V |
товару немає в наявності |
|
![]() |
2SK3479-Z-E1-AZ | Виробник : Renesas Electronics |
![]() |
товару немає в наявності |