| Кількість | Ціна |
|---|---|
| 1+ | 421.87 грн |
| 10+ | 349.34 грн |
| 25+ | 298.20 грн |
| 100+ | 245.94 грн |
| 250+ | 241.76 грн |
| 500+ | 230.62 грн |
| 800+ | 175.57 грн |
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Технічний опис 2SK3812-ZP-E1-AZ Renesas Electronics
Description: MP-25LZP, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263-3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), 213W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції 2SK3812-ZP-E1-AZ за ціною від 243.14 грн до 514.97 грн
| Фото | Назва | Виробник | Інформація |
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2SK3812-ZP-E1-AZ | Виробник : Renesas Electronics Corporation |
 Description: MP-25LZPDrain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
на замовлення 1357 шт: термін постачання 21-31 дні (днів) |
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2SK3812-ZP-E1-AZ | Виробник : Renesas Electronics Corporation |
Description: MP-25LZP Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |