2SK3978-TL-E ONSEMI
Виробник: ONSEMI
Description: ONSEMI - 2SK3978-TL-E - 2SK3978 - N-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Відгуки про товар
Написати відгук
Технічний опис 2SK3978-TL-E ONSEMI
Description: 2SK3978 - N-CHANNEL SILICON MOSF, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TP, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Інші пропозиції 2SK3978-TL-E за ціною від 17.67 грн до 17.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| 2SK3978-TL-E | onsemi |
Description: 2SK3978 - N-CHANNEL SILICON MOSF Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TP Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
на замовлення 28700 шт: термін постачання 21-31 дні (днів) |
|
|||
| 2SK3978-TL-E | SANYO |
SOT252/2.5 |
на замовлення 199 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| 2SK3978-TL-E |
|
Виробник: onsemi
Description: 2SK3978 - N-CHANNEL SILICON MOSF
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TP
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: 2SK3978 - N-CHANNEL SILICON MOSF
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TP
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
на замовлення 28700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1211+ | 17.67 грн |
| 2SK3978-TL-E |
|
Виробник: SANYO
SOT252/2.5
SOT252/2.5
на замовлення 199 шт:
термін постачання 14-28 дні (днів)