Технічний опис 2SK4066-DL-1E ON Semiconductor
Description: MOSFET N-CH 60V 100A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V, Power Dissipation (Max): 1.65W (Ta), 90W (Tc), Supplier Device Package: TO-263-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V.
Інші пропозиції 2SK4066-DL-1E
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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2SK4066-DL-1E | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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2SK4066-DL-1E | Виробник : onsemi |
Description: MOSFET N-CH 60V 100A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Supplier Device Package: TO-263-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V |
товар відсутній |