2SK4093TZ-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N-CH 250V 1A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 4V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
на замовлення 11960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 307+ | 74.64 грн |
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Технічний опис 2SK4093TZ-E Renesas Electronics Corporation
Description: MOSFET N-CH 250V 1A TO92MOD, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 4V, Power Dissipation (Max): 900mW (Ta), Supplier Device Package: TO-92MOD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Інші пропозиції 2SK4093TZ-E
| Фото | Назва | Виробник | Інформація |
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2SK4093TZ-E | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 250V 1A TO92MOD Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 4V Power Dissipation (Max): 900mW (Ta) Supplier Device Package: TO-92MOD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
товару немає в наявності |
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2SK4093TZ-E | Виробник : Renesas Electronics |
MOSFET MOSFET |
товару немає в наявності |