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2SK4150TZ-E Renesas


rej03g1909_2sk4150ds.pdf Виробник: Renesas
Description: 2SK4150TZ - N-CHANNEL POWER MOSF
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
на замовлення 19000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
475+41.8 грн
Мінімальне замовлення: 475
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Технічний опис 2SK4150TZ-E Renesas

Description: 2SK4150TZ - N-CHANNEL POWER MOSF, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TO-92, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V.

Інші пропозиції 2SK4150TZ-E

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2SK4150TZ-E 2SK4150TZ-E Виробник : Renesas Electronics Corporation 2sk4150-datasheet?language=en Description: MOSFET N-CH 250V 400MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
товар відсутній
2SK4150TZ-E 2SK4150TZ-E Виробник : Renesas Electronics rnccs06018_1-2291302.pdf MOSFET MOSFET
товар відсутній