2V7002KT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.54 грн |
| 6000+ | 3.06 грн |
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Технічний опис 2V7002KT1G onsemi
Description: ONSEMI - 2V7002KT1G - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.6 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 380mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 420mW, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.6ohm, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції 2V7002KT1G за ціною від 2.29 грн до 18.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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2V7002KT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5567 шт: термін постачання 14-30 дні (днів) |
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2V7002KT1G | onsemi |
Description: MOSFET N-CH 60V 320MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 60187 шт: термін постачання 21-31 дні (днів) |
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2V7002KT1G | ON Semiconductor |
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| 2V7002KT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5567 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.58 грн |
| 56+ | 7.45 грн |
| 78+ | 5.33 грн |
| 100+ | 4.55 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.79 грн |
| 1500+ | 2.60 грн |
| 3000+ | 2.29 грн |
| 2V7002KT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Qualification: AEC-Q101
на замовлення 60187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.56 грн |
| 28+ | 10.87 грн |
| 100+ | 6.78 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.12 грн |
| 2V7002KT1G |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R Automotive AEC-Q101
на замовлення 4 шт:
термін постачання 21-31 дні (днів)