30KP28CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE 28VWM 50VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 606A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 1452.09 грн |
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Технічний опис 30KP28CA MDE Semiconductor Inc
Description: TVS DIODE 28VWM 50VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 606A, Voltage - Reverse Standoff (Typ): 28V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 31.28V, Voltage - Clamping (Max) @ Ipp: 50V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Інші пропозиції 30KP28CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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30KP28CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 31.3V; 606A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Kind of package: bulk Type of diode: TVS Leakage current: 10mA Max. off-state voltage: 28V Breakdown voltage: 31.3V Max. forward impulse current: 606A Peak pulse power dissipation: 30kW Semiconductor structure: bidirectional Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товару немає в наявності |
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30KP28CA | Виробник : CDIL |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 31.3V; 606A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Kind of package: bulk Type of diode: TVS Leakage current: 10mA Max. off-state voltage: 28V Breakdown voltage: 31.3V Max. forward impulse current: 606A Peak pulse power dissipation: 30kW Semiconductor structure: bidirectional Features of semiconductor devices: glass passivated |
товару немає в наявності |