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Технічний опис 30KPA170CA-B Littelfuse Inc.
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW, Type of diode: TVS, Max. off-state voltage: 170V, Breakdown voltage: 199.4V, Max. forward impulse current: 110.2A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: bulk, Peak pulse power dissipation: 30kW, Manufacturer series: 30KPA, Features of semiconductor devices: glass passivated.
Інші пропозиції 30KPA170CA-B
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
30KPA170CA-B | Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
товару немає в наявності |
В кошику од. на суму грн. |
|
30KPA170CA-B | LITTELFUSE |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| 30KPA170CA-B |
![]() |
Виробник: Littelfuse
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial
товару немає в наявності
В кошику
од. на суму грн.
| 30KPA170CA-B |
![]() |
Виробник: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 199.4V; 110.2A; bidirectional; ±5%; P600; bulk; 30kW
Type of diode: TVS
Max. off-state voltage: 170V
Breakdown voltage: 199.4V
Max. forward impulse current: 110.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.




