Технічний опис 30KPA258A-B Littelfuse Inc.
Category: Unidirectional TVS THT diodes, Description: Diode: TVS; 30kW; 302.6V; 72.8A; unidirectional; ±5%; P600; bulk, Manufacturer series: 30KPA, Mounting: THT, Max. off-state voltage: 258V, Semiconductor structure: unidirectional, Max. forward impulse current: 72.8A, Breakdown voltage: 302.6V, Leakage current: 2µA, Kind of package: bulk, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 30kW, Case: P600, Tolerance: ±5%, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA258A-B
| Фото | Назва | Виробник | Інформація |
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30KPA258A-B | Виробник : LITTELFUSE |
 Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 30kW; 302.6V; 72.8A; unidirectional; ±5%; P600; bulk Manufacturer series: 30KPA Mounting: THT Max. off-state voltage: 258V Semiconductor structure: unidirectional Max. forward impulse current: 72.8A Breakdown voltage: 302.6V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% кількість в упаковці: 1 шт |
товару немає в наявності |
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30KPA258A-B | Виробник : Littelfuse |
ESD Protection Diodes / TVS Diodes TVS Hi-Power Diode Axial |
товару немає в наявності |
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30KPA258A-B | Виробник : LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 30kW; 302.6V; 72.8A; unidirectional; ±5%; P600; bulk Manufacturer series: 30KPA Mounting: THT Max. off-state voltage: 258V Semiconductor structure: unidirectional Max. forward impulse current: 72.8A Breakdown voltage: 302.6V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: P600 Tolerance: ±5% |
товару немає в наявності |