30KPA33A/B YAGEO
Виробник: YAGEO
Description: 30KPA, P600, 33V, 58.5V, BOX
Packaging: Box
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 517.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.9V
Voltage - Clamping (Max) @ Ipp: 58.5V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 848.52 грн |
| 10+ | 619.50 грн |
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Технічний опис 30KPA33A/B YAGEO
Description: 30KPA, P600, 33V, 58.5V, BOX, Packaging: Box, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 517.9A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.9V, Voltage - Clamping (Max) @ Ipp: 58.5V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 30KPA33A/B за ціною від 1024.79 грн до 1290.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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30KPA33A-B | LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 30kW; 38.7V; 517.9A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 38.7V Max. forward impulse current: 517.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 5mA Kind of package: bulk Peak pulse power dissipation: 30kW Manufacturer series: 30KPA Features of semiconductor devices: glass passivated |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
|
| 30KPA33A-B |
|
Виробник: LITTELFUSE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 38.7V; 517.9A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 5mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 30kW; 38.7V; 517.9A; unidirectional; ±5%; P600; bulk
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 5mA
Kind of package: bulk
Peak pulse power dissipation: 30kW
Manufacturer series: 30KPA
Features of semiconductor devices: glass passivated
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1290.24 грн |
| 3+ | 1049.67 грн |
| 10+ | 1024.79 грн |