45P40 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
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Технічний опис 45P40 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -45A; 80W; TO252, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Mounting: SMD, Case: TO252, Technology: Trench, Polarisation: unipolar, Drain current: -45A, Drain-source voltage: -40V, Gate charge: 60nC, Power dissipation: 80W.
Інші пропозиції 45P40 за ціною від 25.28 грн до 93.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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45P40 | Goford Semiconductor |
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 80W (Tc) |
на замовлення 3240 шт: термін постачання 21-31 дні (днів) |
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| 45P40 |
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Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Description: P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
на замовлення 3240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.76 грн |
| 10+ | 57.08 грн |
| 100+ | 37.84 грн |
| 500+ | 27.77 грн |
| 1000+ | 25.28 грн |