4GBL01

4GBL01 Vishay General Semiconductor - Diodes Division


4GBL.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 100V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Технічний опис 4GBL01 Vishay General Semiconductor - Diodes Division

Description: BRIDGE RECT 3PHASE 100V 4A GBL, Packaging: Bulk, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Three Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Voltage - Peak Reverse (Max): 100 V, Current - Average Rectified (Io): 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.