Технічний опис 50MT060WH TOS
Description: IGBT MODULE 600V 114A 658W 12MTP, Package / Case: 12-MTP Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: 12-MTP, IGBT Type: PT, Current - Collector (Ic) (Max): 114 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 658 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V.
Інші пропозиції 50MT060WH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 50MT060WH | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: IGBT MODULE 600V 114A 658W 12MTPPackage / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: 12-MTP IGBT Type: PT Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 658 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V |
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