5HN01M-TL-E onsemi
Виробник: onsemiDescription: MOSFET N-CH 50V 100MA 3MCP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
на замовлення 11794 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2959+ | 7.57 грн |
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Технічний опис 5HN01M-TL-E onsemi
Description: MOSFET N-CH 50V 100MA 3MCP, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: MCP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V.
Інші пропозиції 5HN01M-TL-E
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5HN01M-TL-E | Виробник : onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: MCP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V |
товару немає в наявності |