5LP01C-TB-E onsemi

Description: MOSFET P-CH 50V 70MA 3CP, Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: SC-59-3/CP3, Power Dissipation (Max): 250mW (Ta), Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V, Current - Continuous Drain (Id) @ 25°C: 70mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).