Технічний опис 6.6SM8Z30A-Q DComponents
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; DO218AB, Breakdown voltage: 33.3...36.8V, Leakage current: 10µA, Application: automotive industry, Kind of package: reel; tape, Type of diode: TVS, Peak pulse power dissipation: 6.6kW, Mounting: SMD, Case: DO218AB, Max. off-state voltage: 30V, Semiconductor structure: unidirectional, Max. forward impulse current: 136A, кількість в упаковці: 1 шт.
Інші пропозиції 6.6SM8Z30A-Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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6.6SM8Z30A-Q | Виробник : DIOTEC SEMICONDUCTOR |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; DO218AB Breakdown voltage: 33.3...36.8V Leakage current: 10µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 6.6kW Mounting: SMD Case: DO218AB Max. off-state voltage: 30V Semiconductor structure: unidirectional Max. forward impulse current: 136A кількість в упаковці: 1 шт |
товару немає в наявності |
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6.6SM8Z30A-Q | Виробник : DIOTEC SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; DO218AB Breakdown voltage: 33.3...36.8V Leakage current: 10µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 6.6kW Mounting: SMD Case: DO218AB Max. off-state voltage: 30V Semiconductor structure: unidirectional Max. forward impulse current: 136A |
товару немає в наявності |