60N06 Goford Semiconductor
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.95 грн |
| 10+ | 45.64 грн |
| 50+ | 33.67 грн |
| 100+ | 27.96 грн |
| 500+ | 21.57 грн |
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Технічний опис 60N06 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 55A, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Power dissipation: 60W, Gate charge: 54nC, Technology: Trench.