Технічний опис 6A08B-G Comchip Technology
Description: DIODE GEN PURP 800V 6A R-6, Packaging: Bulk, Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції 6A08B-G
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6A08B-G | Виробник : Comchip Technology |
 Description: DIODE GEN PURP 800V 6A R-6Packaging: Bulk Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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6A08B-G | Виробник : Comchip Technology |
Rectifiers DIODE GEN PURP 800V 6A R6 |
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