Технічний опис 6A10G B0G Taiwan Semiconductor
Description: DIODE GEN PURP 100V 6A R-6, Packaging: Bulk, Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Інші пропозиції 6A10G B0G
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6A10G B0G | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Bulk Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
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6A10G B0G | Виробник : Taiwan Semiconductor |
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товару немає в наявності |