6EDL04N02PR Infineon Technologies
на замовлення 4775 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 366.91 грн |
| 10+ | 240.81 грн |
| 25+ | 194.15 грн |
| 100+ | 168.48 грн |
| 250+ | 159.65 грн |
| 500+ | 143.61 грн |
| 1000+ | 130.77 грн |
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Технічний опис 6EDL04N02PR Infineon Technologies
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6, Type of integrated circuit: driver, Topology: MOSFET three-phase bridge, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Technology: EiceDRIVER™, Case: TSSOP28, Output current: -0.375...0.24A, Number of channels: 6, Integrated circuit features: integrated bootstrap functionality, Mounting: SMD, Kind of package: reel; tape, Supply voltage: 10...17.5V, Voltage class: 200V, Protection: anti-overload OPP; undervoltage UVP.
Інші пропозиції 6EDL04N02PR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
6EDL04N02PR | Виробник : INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6 Type of integrated circuit: driver Topology: MOSFET three-phase bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: EiceDRIVER™ Case: TSSOP28 Output current: -0.375...0.24A Number of channels: 6 Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 10...17.5V Voltage class: 200V Protection: anti-overload OPP; undervoltage UVP |
товару немає в наявності |