70T651S12BF8 Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: IC SRAM 9MBIT PARALLEL 208CABGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 36
Access Time: 12 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Part Status: Active
Supplier Device Package: 208-CABGA (15x15)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Packaging: Tape & Reel (TR)
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Технічний опис 70T651S12BF8 Renesas Electronics America Inc
Description: IC SRAM 9MBIT PARALLEL 208CABGA, DigiKey Programmable: Not Verified, Memory Organization: 256K x 36, Access Time: 12 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 12ns, Part Status: Active, Supplier Device Package: 208-CABGA (15x15), Memory Format: SRAM, Technology: SRAM - Dual Port, Asynchronous, Voltage - Supply: 2.4V ~ 2.6V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 9Mbit, Mounting Type: Surface Mount, Package / Case: 208-LFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції 70T651S12BF8
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
70T651S12BF8 | Виробник : Renesas Electronics |
SRAM 256K X 36 ASYNC DP RAM |
товару немає в наявності |
