Технічний опис 71024S20TYG8 Renesas Electronics
Description: IC SRAM 1MBIT PARALLEL 32SOJ, Mounting Type: Surface Mount, Package / Case: 32-BSOJ (0.300", 7.62mm Width), Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 128K x 8, Access Time: 20 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 20ns, Supplier Device Package: 32-SOJ, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 1Mbit.
Інші пропозиції 71024S20TYG8
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
71024S20TYG8 | Renesas Electronics Corporation |
Description: IC SRAM 1MBIT PARALLEL 32SOJMounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 20ns Supplier Device Package: 32-SOJ Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 1Mbit |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| 71024S20TYG8 |
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Виробник: Renesas Electronics Corporation
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 20ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 20ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.



