71256L100TDB IDT, Integrated Device Technology Inc
Виробник: IDT, Integrated Device Technology Inc
Description: IC SRAM 256KBIT PARALLEL 28CDIP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Supplier Device Package: 28-CDIP
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 9+ | 2432.39 грн |
Відгуки про товар
Написати відгук
Технічний опис 71256L100TDB IDT, Integrated Device Technology Inc
Description: IC SRAM 256KBIT PARALLEL 28CDIP, DigiKey Programmable: Not Verified, Memory Organization: 32K x 8, Access Time: 100 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 100ns, Supplier Device Package: 28-CDIP, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: -55°C ~ 125°C (TA), Memory Type: Volatile, Memory Size: 256Kbit, Mounting Type: Through Hole, Package / Case: 28-CDIP (0.300", 7.62mm), Packaging: Bulk.
Інші пропозиції 71256L100TDB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 71256L100TDB | Виробник : Renesas Electronics Corporation |
Description: IC SRAM 256KBIT PARALLEL 28CDIPDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Supplier Device Package: 28-CDIP Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Memory Type: Volatile Memory Size: 256Kbit Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
||
| 71256L100TDB | Виробник : IDT |
SRAM 256K(32KX8) SRAM |
товару немає в наявності |

