7164S35DB IDT, Integrated Device Technology Inc
Виробник: IDT, Integrated Device Technology IncDescription: IC SRAM 64KBIT PARALLEL 28CDIP
Packaging: Bulk
Package / Case: 28-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 1929.85 грн |
Відгуки про товар
Написати відгук
Технічний опис 7164S35DB IDT, Integrated Device Technology Inc
Description: IC SRAM 64KBIT PARALLEL 28CDIP, Packaging: Bulk, Package / Case: 28-CDIP (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 64Kbit, Memory Type: Volatile, Operating Temperature: -55°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 28-CDIP, Write Cycle Time - Word, Page: 35ns, Memory Interface: Parallel, Access Time: 35 ns, Memory Organization: 8K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції 7164S35DB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
7164S35DB | Виробник : Renesas Electronics Corporation |
Description: IC SRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
|
| 7164S35DB | Виробник : IDT |
SRAM 64K(8KX8) BICMOS STAT RAM |
товару немає в наявності |