8.0SMDJ100A LITTELFUSE
Виробник: LITTELFUSECategory: Unidirectional TVS SMD diodes
Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB
Max. off-state voltage: 100V
Tolerance: ±5%
Case: DO214AB
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Features of semiconductor devices: glass passivated
Manufacturer series: 8.0SMDJ
Peak pulse power dissipation: 8kW
Semiconductor structure: unidirectional
Max. forward impulse current: 49.4A
Breakdown voltage: 111...123V
Leakage current: 5µA
кількість в упаковці: 3000 шт
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Технічний опис 8.0SMDJ100A LITTELFUSE
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB, Max. off-state voltage: 100V, Tolerance: ±5%, Case: DO214AB, Kind of package: reel; tape, Type of diode: TVS, Mounting: SMD, Features of semiconductor devices: glass passivated, Manufacturer series: 8.0SMDJ, Peak pulse power dissipation: 8kW, Semiconductor structure: unidirectional, Max. forward impulse current: 49.4A, Breakdown voltage: 111...123V, Leakage current: 5µA, кількість в упаковці: 3000 шт.
Інші пропозиції 8.0SMDJ100A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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8.0SMDJ100A | Виробник : LITTELFUSE |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB Max. off-state voltage: 100V Tolerance: ±5% Case: DO214AB Kind of package: reel; tape Type of diode: TVS Mounting: SMD Features of semiconductor devices: glass passivated Manufacturer series: 8.0SMDJ Peak pulse power dissipation: 8kW Semiconductor structure: unidirectional Max. forward impulse current: 49.4A Breakdown voltage: 111...123V Leakage current: 5µA |
товару немає в наявності |