8.0SMDJ40CA-T7 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 124.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 8000W (8kW)
Power Line Protection: No
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Технічний опис 8.0SMDJ40CA-T7 Littelfuse Inc.
Description: TVS DIODE 40VWM 64.5VC DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: Telecom, Current - Peak Pulse (10/1000µs): 124.1A, Voltage - Reverse Standoff (Typ): 40V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 44.4V, Voltage - Clamping (Max) @ Ipp: 64.5V, Power - Peak Pulse: 8000W (8kW), Power Line Protection: No.
Інші пропозиції 8.0SMDJ40CA-T7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
8.0SMDJ40CA-T7 | Littelfuse Inc. |
Description: TVS DIODE 40VWM 64.5VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 124.1A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 8000W (8kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
|
8.0SMDJ40CA-T7 | LITTELFUSE |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 8kW; 44.4÷49.1V; 124.1A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 8kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Semiconductor structure: bidirectional Case: DO214AB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% Max. forward impulse current: 124.1A Manufacturer series: 8.0SMDJ |
товару немає в наявності |
В кошику од. на суму грн. |
| 8.0SMDJ40CA-T7 |
![]() |
Виробник: Littelfuse Inc.
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 124.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 8000W (8kW)
Power Line Protection: No
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 124.1A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 8000W (8kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 8.0SMDJ40CA-T7 |
![]() |
Виробник: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8kW; 44.4÷49.1V; 124.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Semiconductor structure: bidirectional
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Max. forward impulse current: 124.1A
Manufacturer series: 8.0SMDJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 8kW; 44.4÷49.1V; 124.1A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Semiconductor structure: bidirectional
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Max. forward impulse current: 124.1A
Manufacturer series: 8.0SMDJ
товару немає в наявності
В кошику
од. на суму грн.



