Технічний опис 85EPF04 Vishay General Semiconduc
Description: DIODE GEN PURP 400V 85A POWIRTAB, Packaging: Bulk, Package / Case: PowerTab™, PowIRtab™, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 190 ns, Technology: Standard, Current - Average Rectified (Io): 85A, Supplier Device Package: PowIRtab™, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A, Current - Reverse Leakage @ Vr: 100 µA @ 400 V.
Інші пропозиції 85EPF04
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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85EPF04 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 400V 85A POWIRTABPackaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 85EPF04 | Vishay Semiconductors |
Rectifiers |
товару немає в наявності |
В кошику од. на суму грн. |
| 85EPF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 85EPF04 |
|
Виробник: Vishay Semiconductors
Rectifiers
Rectifiers
товару немає в наявності
В кошику
од. на суму грн.