9926 Goford Semiconductor

Виробник: Goford Semiconductor
Description: N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)