Технічний опис APT10021JLL Microchip Technology
Description: MOSFET N-CH 1000V 37A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V.
Інші пропозиції APT10021JLL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APT10021JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω кількість в упаковці: 1 шт |
товар відсутній |
||
APT10021JLL | Виробник : MICROSEMI |
ISOTOP/POWER MOSFET - MOS7 APT10021 кількість в упаковці: 10 шт |
товар відсутній |
||
APT10021JLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 37A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V |
товар відсутній |
||
APT10021JLL | Виробник : Microchip Technology | MOSFET Modules MOSFET MOS7 1000 V 21 Ohm SOT-227 |
товар відсутній |
||
APT10021JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Power dissipation: 694W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω |
товар відсутній |