BYT52M-TAP VISHAY
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.15mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.15mA
Reverse recovery time: 200ns
на замовлення 16821 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
17+ | 22.03 грн |
19+ | 18.12 грн |
50+ | 16.4 грн |
58+ | 13.93 грн |
158+ | 13.11 грн |
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Технічний опис BYT52M-TAP VISHAY
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 1A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.3V, Leakage current: 0.15mA, Reverse recovery time: 200ns, кількість в упаковці: 1 шт.
Інші пропозиції BYT52M-TAP за ціною від 15.73 грн до 46.33 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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BYT52M-TAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.15mA Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 16821 шт: термін постачання 7-14 дні (днів) |
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BYT52M-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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BYT52M-TAP | Виробник : Vishay | Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo |
товар відсутній |
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BYT52M-TAP | Виробник : Vishay | Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo |
товар відсутній |
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BYT52M-TAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.4A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 1.4A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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BYT52M-TAP | Виробник : Vishay Semiconductors | Rectifiers 1.4 Amp 1000 Volt 50 Amp IFSM |
товар відсутній |