FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 113.82 грн |
10+ | 91.01 грн |
100+ | 72.48 грн |
500+ | 57.55 грн |
1000+ | 48.83 грн |
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Технічний опис FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 145pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції FESB16JT-E3/45 за ціною від 46.42 грн до 124.31 грн
Фото | Назва | Виробник | Інформація |
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FESB16JT-E3/45 | Виробник : Vishay General Semiconductor | Rectifiers 16 Amp 600 Volt 50ns |
на замовлення 3076 шт: термін постачання 21-30 дні (днів) |
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FESB16JT-E3/45 | Виробник : Vishay | Rectifier Diode Switching 600V 16A 50ns 3-Pin(2+Tab) TO-263AB Tube |
товар відсутній |
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FESB16JT-E3/45 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 16A; 50ns; D2PAK; Ufmax: 1.5V; Ir: 500uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 600V Load current: 16A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 145pF Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 250A Leakage current: 500µA Kind of package: tube |
товар відсутній |