IXFK120N30P3 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1138.41 грн |
10+ | 782.13 грн |
100+ | 711.12 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFK120N30P3 Littelfuse Inc.
Description: MOSFET N-CH 300V 120A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V, Power Dissipation (Max): 1130W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V.
Інші пропозиції IXFK120N30P3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXFK120N30P3 | Виробник : Littelfuse | Trans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-264AA |
товар відсутній |
||
IXFK120N30P3 | Виробник : Littelfuse | Trans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-264AA |
товар відсутній |
||
IXFK120N30P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 1.13kW Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
||
IXFK120N30P3 | Виробник : IXYS | MOSFETs N-Channel: Power MOSFET w/Fast Diode |
товар відсутній |
||
IXFK120N30P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 1.13kW Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
товар відсутній |