Технічний опис IXFK120N30P3 Littelfuse
Description: MOSFET N-CH 300V 120A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V, Power Dissipation (Max): 1130W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V.
Інші пропозиції IXFK120N30P3
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IXFK120N30P3 | Виробник : IXYS |
 Description: MOSFET N-CH 300V 120A TO264AAPackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V Power Dissipation (Max): 1130W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V |
товару немає в наявності |
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IXFK120N30P3 | Виробник : IXYS |
MOSFETs N-Channel: Power MOSFET w/Fast Diode |
товару немає в наявності |
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IXFK120N30P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 150nC On-state resistance: 27mΩ Drain current: 120A Drain-source voltage: 300V Power dissipation: 1.13kW Case: TO264 Mounting: THT Kind of channel: enhancement |
товару немає в наявності |