Технічний опис JAN2N6782 HARRIS
Description: MOSFET N-CH 100V 3.5A TO39, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-39, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V.
Інші пропозиції JAN2N6782
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| JAN2N6782 | Виробник : IOR |
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на замовлення 9000 шт: термін постачання 14-28 дні (днів) |
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JAN2N6782 | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
товар відсутній |