STWA57N65M5 STMicroelectronics


en.DM00072252.pdf Виробник: STMicroelectronics

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термін постачання 14-28 дні (днів)
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Технічний опис STWA57N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 42A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.

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STWA57N65M5 Виробник : STMicroelectronics 15172838415266250.pdf Trans MOSFET N-CH 650V 42A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
STWA57N65M5 STWA57N65M5 Виробник : STMicroelectronics 15172838415266250.pdf Trans MOSFET N-CH 650V 42A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
STWA57N65M5 Виробник : STMicroelectronics stwa57n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STWA57N65M5 STWA57N65M5 Виробник : STMicroelectronics en.DM00072252.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
товар відсутній
STWA57N65M5 STWA57N65M5 Виробник : STMicroelectronics stw57n65m5-1852164.pdf MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh
товар відсутній
STWA57N65M5 Виробник : STMicroelectronics stwa57n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній