Технічний опис STWA57N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.
Інші пропозиції STWA57N65M5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STWA57N65M5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 42A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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STWA57N65M5 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 42A 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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| STWA57N65M5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 кількість в упаковці: 1 шт |
товару немає в наявності |
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STWA57N65M5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 42A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
товару немає в наявності |
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STWA57N65M5 | Виробник : STMicroelectronics |
MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh |
товару немає в наявності |
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| STWA57N65M5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 |
товару немає в наявності |