YJQ15GP10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 9372 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
18+ | 21.27 грн |
25+ | 14.36 грн |
72+ | 10.73 грн |
198+ | 10.15 грн |
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Технічний опис YJQ15GP10A YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A, Type of transistor: P-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9.5A, Pulsed drain current: -45A, Power dissipation: 17.2W, Case: DFN3.3x3.3 EP, Gate-source voltage: ±20V, On-state resistance: 120mΩ, Mounting: SMD, Gate charge: 3.98nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції YJQ15GP10A за ціною від 12.18 грн до 25.52 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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YJQ15GP10A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 120mΩ Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 9372 шт: термін постачання 7-14 дні (днів) |
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