Технічний опис A1P25S12M3 STMicroelectronics
Description: IGBT MOD 1200V 25A 197W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 197 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V.
Інші пропозиції A1P25S12M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
A1P25S12M3 | Виробник : STMicroelectronics |
 Trans IGBT Module N-CH 1200V 25A 197mW 22-Pin ACEPACK-1 Tray |
товару немає в наявності |
|
 |
A1P25S12M3 | Виробник : STMicroelectronics |
Description: IGBT MOD 1200V 25A 197W ACEPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 197 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V |
товару немає в наявності |