A1P50S65M2 STMicroelectronics
Виробник: STMicroelectronics
IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
| Кількість | Ціна |
|---|---|
| 1+ | 4087.65 грн |
| 10+ | 3759.95 грн |
| 18+ | 3131.52 грн |
| 108+ | 2954.48 грн |
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Технічний опис A1P50S65M2 STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK 1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.
Інші пропозиції A1P50S65M2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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A1P50S65M2 | Виробник : STMicroelectronics |
Description: IGBT MOD 650V 50A 208W ACEPACK 1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 208 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V |
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