A2C25S12M3 STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT MOD 1200V 25A 197W ACEPACK2
Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 197 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: ACEPACK™ 2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Технічний опис A2C25S12M3 STMicroelectronics
Description: IGBT MOD 1200V 25A 197W ACEPACK2, Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 197 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: ACEPACK™ 2, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції A2C25S12M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
A2C25S12M3 | Виробник : STMicroelectronics |
IGBT Modules PTD NEW MAT & PWR SOLUTION |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
