Технічний опис A2C50S65M2-F STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 2, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.
Інші пропозиції A2C50S65M2-F
| Фото | Назва | Виробник | Інформація |
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A2C50S65M2-F | Виробник : STMicroelectronics |
 Description: IGBT MOD 650V 50A 208W ACEPACK2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 208 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V |
товару немає в наявності |
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A2C50S65M2-F | Виробник : STMicroelectronics |
IGBT Modules ACEPACK 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M se |
товару немає в наявності |