A2C50S65M2-F STMicroelectronics
Виробник: STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK 2
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 208 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: ACEPACK™ 2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
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Технічний опис A2C50S65M2-F STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK 2, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 50 A, IGBT Type: Trench Field Stop, Supplier Device Package: ACEPACK™ 2, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter.
Інші пропозиції A2C50S65M2-F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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A2C50S65M2-F | Виробник : STMicroelectronics |
IGBT Modules ACEPACK 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M se |
товару немає в наявності |