Технічний опис A2C50S65M2 STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 2, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.
Інші пропозиції A2C50S65M2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
A2C50S65M2 | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |
||
![]() |
A2C50S65M2 | Виробник : STMicroelectronics |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 208 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V |
товару немає в наявності |
|
![]() |
A2C50S65M2 | Виробник : STMicroelectronics |
![]() |
товару немає в наявності |