A2I20H060GNR1 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V TO270-15
Packaging: Tape & Reel (TR)
Package / Case: TO-270-15 Variant, Gull Wing
Mounting Type: Surface Mount
Frequency: 1.84GHz
Configuration: Dual
Power - Output: 12W
Gain: 28.9dB
Technology: LDMOS
Supplier Device Package: TO-270WBG-15
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 24 mA
Description: RF MOSFET LDMOS 28V TO270-15
Packaging: Tape & Reel (TR)
Package / Case: TO-270-15 Variant, Gull Wing
Mounting Type: Surface Mount
Frequency: 1.84GHz
Configuration: Dual
Power - Output: 12W
Gain: 28.9dB
Technology: LDMOS
Supplier Device Package: TO-270WBG-15
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 24 mA
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Технічний опис A2I20H060GNR1 NXP USA Inc.
Description: RF MOSFET LDMOS 28V TO270-15, Packaging: Tape & Reel (TR), Package / Case: TO-270-15 Variant, Gull Wing, Mounting Type: Surface Mount, Frequency: 1.84GHz, Configuration: Dual, Power - Output: 12W, Gain: 28.9dB, Technology: LDMOS, Supplier Device Package: TO-270WBG-15, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 24 mA.
Інші пропозиції A2I20H060GNR1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
A2I20H060GNR1 | Виробник : NXP Semiconductors |
 RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V |
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