A2I25H060NR1 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V TO270-17
Packaging: Tape & Reel (TR)
Package / Case: TO-270-17 Variant, Flat Leads
Mounting Type: Surface Mount
Frequency: 2.59GHz
Configuration: Dual
Power - Output: 10.5W
Gain: 26.1dB
Technology: LDMOS
Supplier Device Package: TO-270WB-17
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 26 mA
Description: RF MOSFET LDMOS 28V TO270-17
Packaging: Tape & Reel (TR)
Package / Case: TO-270-17 Variant, Flat Leads
Mounting Type: Surface Mount
Frequency: 2.59GHz
Configuration: Dual
Power - Output: 10.5W
Gain: 26.1dB
Technology: LDMOS
Supplier Device Package: TO-270WB-17
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 26 mA
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Технічний опис A2I25H060NR1 NXP USA Inc.
Description: RF MOSFET LDMOS 28V TO270-17, Packaging: Tape & Reel (TR), Package / Case: TO-270-17 Variant, Flat Leads, Mounting Type: Surface Mount, Frequency: 2.59GHz, Configuration: Dual, Power - Output: 10.5W, Gain: 26.1dB, Technology: LDMOS, Supplier Device Package: TO-270WB-17, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 26 mA.
Інші пропозиції A2I25H060NR1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| A2I25H060NR1 | Виробник : NXP Semiconductors |
 RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 2300-2690 MHz, 10.5 W AVG., 28 V |
товару немає в наявності |