A2T26H300-24SR6 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Packaging: Tape & Reel (TR)
Package / Case: NI-1230-4LS2L
Mounting Type: Chassis Mount
Frequency: 2.5GHz
Configuration: Dual
Power - Output: 60W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: NI-1230-4LS2L
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 800 mA
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Технічний опис A2T26H300-24SR6 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4LS2L, Mounting Type: Chassis Mount, Frequency: 2.5GHz, Configuration: Dual, Power - Output: 60W, Gain: 14.5dB, Technology: LDMOS, Supplier Device Package: NI-1230-4LS2L, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 800 mA.
Інші пропозиції A2T26H300-24SR6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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A2T26H300-24SR6 | NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI1230 Current - Test: 800 mA Voltage - Test: 28 V Voltage - Rated: 65 V Part Status: Obsolete Supplier Device Package: NI-1230-4LS2L Technology: LDMOS Gain: 14.5dB Power - Output: 60W Configuration: Dual Frequency: 2.5GHz Mounting Type: Chassis Mount Package / Case: NI-1230-4LS2L Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| A2T26H300-24SR6 | NXP Semiconductors |
 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V |
товару немає в наявності |
В кошику од. на суму грн. |
| A2T26H300-24SR6 |
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 800 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4LS2L
Technology: LDMOS
Gain: 14.5dB
Power - Output: 60W
Configuration: Dual
Frequency: 2.5GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4LS2L
Packaging: Cut Tape (CT)
Description: RF MOSFET LDMOS 28V NI1230
Current - Test: 800 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: NI-1230-4LS2L
Technology: LDMOS
Gain: 14.5dB
Power - Output: 60W
Configuration: Dual
Frequency: 2.5GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4LS2L
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| A2T26H300-24SR6 |
|
Виробник: NXP Semiconductors
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V
товару немає в наявності
В кошику
од. на суму грн.