Технічний опис A2T26H300-24SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 28V NI1230, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4LS2L, Mounting Type: Chassis Mount, Frequency: 2.5GHz, Configuration: Dual, Power - Output: 60W, Gain: 14.5dB, Technology: LDMOS, Supplier Device Package: NI-1230-4LS2L, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 800 mA.
Інші пропозиції A2T26H300-24SR6
| Фото | Назва | Виробник | Інформація |
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| A2T26H300-24SR6 | Виробник : NXP Semiconductors |
 RF Power LDMOS Transistor |
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A2T26H300-24SR6 | Виробник : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI1230 Packaging: Tape & Reel (TR) Package / Case: NI-1230-4LS2L Mounting Type: Chassis Mount Frequency: 2.5GHz Configuration: Dual Power - Output: 60W Gain: 14.5dB Technology: LDMOS Supplier Device Package: NI-1230-4LS2L Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 800 mA |
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A2T26H300-24SR6 | Виробник : NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI1230 Packaging: Cut Tape (CT) Package / Case: NI-1230-4LS2L Mounting Type: Chassis Mount Frequency: 2.5GHz Configuration: Dual Power - Output: 60W Gain: 14.5dB Technology: LDMOS Supplier Device Package: NI-1230-4LS2L Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 800 mA |
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| A2T26H300-24SR6 | Виробник : NXP Semiconductors |
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V |
товар відсутній |